APT33GF120B2RDQ2G

APT33GF120B2RDQ2G

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APT33GF120B2RDQ2G
Description:
IGBT 1200V 64A 357W TMAX
Package:
Tube
Datasheet:
APT33GF120B2RDQ2G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:APT33GF120B2RDQ2G
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:Microchip Technology
Packaging:Tube
Product Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):64 A
Current - Collector Pulsed (Icm):75 A
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 25A
Power - Max:357 W
Switching Energy:1.315mJ (on), 1.515mJ (off)
Input Type:Standard
Gate Charge:170 nC
Td (on/off) @ 25°C:14ns/185ns
Test Condition:800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:-
In Stock: 30
Stock:
30 Can Ship Immediately
  • Share:
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