2N657S

2N657S

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2N657S
Description:
POWER BJT
Package:
Bulk
Datasheet:
2N657S Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2N657S
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
Power - Max:600 mW
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AA, TO-5-3 Metal Can
Supplier Device Package:TO-5AA
In Stock: 0
Stock:
0 Can Ship Immediately
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