2N5609

2N5609

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2N5609
Description:
POWER BJT
Package:
Bulk
Datasheet:
2N5609 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2N5609
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:750mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:25 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-213AA, TO-66-2
Supplier Device Package:TO-66 (TO-213AA)
In Stock: 0
Stock:
0 Can Ship Immediately
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