2N5415U4

2N5415U4

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2N5415U4
Description:
POWER BJT
Package:
Bulk
Datasheet:
2N5415U4 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2N5415U4
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):200 V
Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, No Lead
Supplier Device Package:U4
In Stock: 0
Stock:
0 Can Ship Immediately
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For Use With
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