2N5339P

2N5339P

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2N5339P
Description:
POWER BJT
Package:
Bulk
Datasheet:
2N5339P Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2N5339P
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 500mA, 5A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2A, 2V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 200°C
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
In Stock: 0
Stock:
0 Can Ship Immediately
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