2N5010S

2N5010S

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2N5010S
Description:
POWER BJT
Package:
Bulk
Datasheet:
2N5010S Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2N5010S
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):500 V
Vce Saturation (Max) @ Ib, Ic:1.4V @ 5mA, 25mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 25mA, 10V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
In Stock: 0
Stock:
0 Can Ship Immediately
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