MSJP11N65-BP

MSJP11N65-BP

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MSJP11N65-BP
Description:
MOSFET N-CH 650V 11A TO220AB
Package:
Tube
Datasheet:
MSJP11N65-BP Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MSJP11N65-BP
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Micro Commercial Co
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:901 pF @ 50 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB (H)
Package / Case:TO-220-3
In Stock: 4926
Stock:
4926 Can Ship Immediately
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