MIW50N65F-BP

MIW50N65F-BP

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MIW50N65F-BP
Description:
IGBT 650V 40A TO-247
Package:
Tube
Datasheet:
MIW50N65F-BP Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MIW50N65F-BP
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:Micro Commercial Co
Packaging:Tube
Product Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):85 A
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 50A
Power - Max:326 W
Switching Energy:1.27mJ (on), 650µJ (off)
Input Type:Standard
Gate Charge:450 nC
Td (on/off) @ 25°C:55ns/319ns
Test Condition:300V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AB
In Stock: 0
Stock:
0 Can Ship Immediately
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