MCMN2014HE3-TP

MCMN2014HE3-TP

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MCMN2014HE3-TP
Description:
N-CHANNEL MOSFET, DFN2020-6LE
Package:
Tape & Reel (TR)
Datasheet:
MCMN2014HE3-TP Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MCMN2014HE3-TP
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Micro Commercial Co
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:15A
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1791 pF @ 10 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020-6LE
Package / Case:6-VDFN Exposed Pad
In Stock: 0
Stock:
0 Can Ship Immediately
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