MCMN2012-TP

MCMN2012-TP

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MCMN2012-TP
Description:
MOSFET N-CH 20V 12A DFN2020-6J
Package:
Cut Tape (CT)
Datasheet:
MCMN2012-TP Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MCMN2012-TP
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Micro Commercial Co
Packaging:Cut Tape (CT)
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 4 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020-6J
Package / Case:6-WDFN Exposed Pad
In Stock: 0
Stock:
0 Can Ship Immediately
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