LS5911 DIE

LS5911 DIE

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LS5911 DIE
Description:
WIDEBAND, HIGH GAIN, MONOLITHIC
Package:
Tray
Datasheet:
LS5911 DIE Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:LS5911 DIE
Category:Discrete Semiconductor Products
Subcategory:Transistors - JFETs
Manufacturer:Linear Integrated Systems, Inc.
Packaging:Tray
Product Status:Active
FET Type:2 N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):-
Current - Drain (Idss) @ Vds (Vgs=0):7 mA @ 10 V
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
Resistance - RDS(On):-
Power - Max:500 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
In Stock: 5497
Stock:
5497 Can Ship Immediately
  • Share:
For Use With
UF3N170400B7S
UF3N170400B7S
UnitedSiC
JFET 1700V SIC
J310 TO-92 3L
J310 TO-92 3L
Linear Integrated Systems, Inc.
WIDEBAND, HIGH GAIN, SINGLE, N-
MMBFJ113
MMBFJ113
onsemi
JFET N-CH 35V 350MW SOT23
2N4861
2N4861
Microchip Technology
JFET
MQ2N4393UB/TR
MQ2N4393UB/TR
Microchip Technology
JFET
MQ2N4861UB
MQ2N4861UB
Microchip Technology
JFET
PMBFJ111,215
PMBFJ111,215
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23
PMBFJ112,215
PMBFJ112,215
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23
2N4859JTXL02
2N4859JTXL02
Vishay Siliconix
JFET N-CH 30V 360MW TO-18
2N4860JTXV02
2N4860JTXV02
Vishay Siliconix
JFET N-CH 30V TO-206
J109,126
J109,126
NXP USA Inc.
JFET N-CH 25V 0.4W SOT54
J3D081VXU/T1AV5ADJ
J3D081VXU/T1AV5ADJ
NXP USA Inc.
TRANSISTOR JFET
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