IXYP20N65C3D1M

IXYP20N65C3D1M

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IXYP20N65C3D1M
Mfr.:
Description:
IGBT 650V 18A 50W TO220
Package:
Tube
Datasheet:
IXYP20N65C3D1M Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IXYP20N65C3D1M
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:IXYS
Packaging:Tube
Product Status:Active
IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):18 A
Current - Collector Pulsed (Icm):105 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 20A
Power - Max:50 W
Switching Energy:430µJ (on), 350µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:19ns/80ns
Test Condition:400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr):30 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
In Stock: 0
Stock:
0 Can Ship Immediately
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