IXXP12N65B4D1

IXXP12N65B4D1

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IXXP12N65B4D1
Mfr.:
Description:
IGBT
Package:
Tube
Datasheet:
IXXP12N65B4D1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IXXP12N65B4D1
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:IXYS
Packaging:Tube
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):38 A
Current - Collector Pulsed (Icm):70 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 12A
Power - Max:160 W
Switching Energy:440µJ (on), 220µJ (off)
Input Type:Standard
Gate Charge:34 nC
Td (on/off) @ 25°C:13ns/158ns
Test Condition:400V, 12A, 20Ohm, 15V
Reverse Recovery Time (trr):43 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
In Stock: 0
Stock:
0 Can Ship Immediately
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