IXFV12N120P

IXFV12N120P

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IXFV12N120P
Mfr.:
Description:
MOSFET N-CH 1200V 12A PLUS220
Package:
Tube
Datasheet:
IXFV12N120P Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IXFV12N120P
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IXYS
Packaging:Tube
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:103 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):543W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
In Stock: 0
Stock:
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