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See Product Specifications
| Part Number: | IRF5806 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Packaging: | Tube |
| Product Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 86mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 11.4 nC @ 4.5 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 594 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Micro6™(TSOP-6) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
