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| Part Number: | IPW65R190E6FKSA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Packaging: | Tube |
| Product Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs: | 73 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1620 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 151W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3-1 |
| Package / Case: | TO-247-3 |
