IPW60R017C7XKSA1

IPW60R017C7XKSA1

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IPW60R017C7XKSA1
Description:
HIGH POWER_NEW
Package:
Tube
Datasheet:
IPW60R017C7XKSA1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IPW60R017C7XKSA1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:109A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id:4V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9890 pF @ 400 V
FET Feature:-
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
In Stock: 0
Stock:
0 Can Ship Immediately
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