IPN50R1K4CEATMA1

IPN50R1K4CEATMA1

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IPN50R1K4CEATMA1
Description:
MOSFET N-CH 500V 4.8A SOT223
Package:
Tape & Reel (TR)
Datasheet:
IPN50R1K4CEATMA1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IPN50R1K4CEATMA1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:178 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-3
Package / Case:TO-261-4, TO-261AA
In Stock: 0
Stock:
0 Can Ship Immediately
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