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See Product Specifications
| Part Number: | IPG20N10S4L35ATMA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Infineon Technologies |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 20A |
| Rds On (Max) @ Id, Vgs: | 35mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id: | 2.1V @ 16µA |
| Gate Charge (Qg) (Max) @ Vgs: | 17.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1105pF @ 25V |
| Power - Max: | 43W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PG-TDSON-8-4 |
