IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1

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IPD80R1K4CEBTMA1
Description:
MOSFET N-CH 800V 3.9A TO252-3
Package:
Tape & Reel (TR)
Datasheet:
IPD80R1K4CEBTMA1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IPD80R1K4CEBTMA1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Packaging:Tape & Reel (TR)
Product Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
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