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| Part Number: | IMW65R083M1HXKSA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Packaging: | Tube |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Rds On (Max) @ Id, Vgs: | 111mOhm @ 11.2A, 18V |
| Vgs(th) (Max) @ Id: | 5.7V @ 3.3mA |
| Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 18 V |
| Vgs (Max): | +20V, -2V |
| Input Capacitance (Ciss) (Max) @ Vds: | 624 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 104W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3-41 |
| Package / Case: | TO-247-3 |
