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| Part Number: | IMBG120R350M1HXTMA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 468mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id: | 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 5.9 nC @ 18 V |
| Vgs (Max): | +18V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 196 pF @ 800 V |
| FET Feature: | Standard |
| Power Dissipation (Max): | 65W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-7-12 |
| Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
