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Part Number: | IMBF170R650M1XTMA1 |
Category: | Discrete Semiconductor Products |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Infineon Technologies |
Packaging: | Tape & Reel (TR) |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1700 V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 12V, 15V |
Rds On (Max) @ Id, Vgs: | 650mOhm @ 1.5A, 15V |
Vgs(th) (Max) @ Id: | 5.7V @ 1.7mA |
Gate Charge (Qg) (Max) @ Vgs: | 8 nC @ 12 V |
Vgs (Max): | +20V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 422 pF @ 1000 V |
FET Feature: | - |
Power Dissipation (Max): | 88W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-7-13 |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |