IGO60R070D1E8220AUMA1

IGO60R070D1E8220AUMA1

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IGO60R070D1E8220AUMA1
Description:
GAN HV
Package:
Bulk
Datasheet:
IGO60R070D1E8220AUMA1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IGO60R070D1E8220AUMA1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Packaging:Bulk
Product Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 400 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-DSO-20-85
Package / Case:20-PowerSOIC (0.433", 11.00mm Width)
In Stock: 0
Stock:
0 Can Ship Immediately
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