Images are for reference only
See Product Specifications
| Part Number: | FF650R17IE4DPB2BOSA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Modules |
| Manufacturer: | Infineon Technologies |
| Packaging: | Bulk |
| Product Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max): | 1700 V |
| Current - Collector (Ic) (Max): | 650 A |
| Power - Max: | - |
| Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 650A |
| Current - Collector Cutoff (Max): | 5 mA |
| Input Capacitance (Cies) @ Vce: | 54 nF @ 25 V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
