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| Part Number: | DF200R12W1H3B27BOMA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Modules |
| Manufacturer: | Infineon Technologies |
| Packaging: | Bulk |
| Product Status: | Active |
| IGBT Type: | - |
| Configuration: | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max): | 1200 V |
| Current - Collector (Ic) (Max): | 30 A |
| Power - Max: | 375 W |
| Vce(on) (Max) @ Vge, Ic: | 1.3V @ 15V, 30A |
| Current - Collector Cutoff (Max): | 1 mA |
| Input Capacitance (Cies) @ Vce: | 2 nF @ 25 V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
