Images are for reference only
See Product Specifications
| Part Number: | BSP52E6327HTSA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Infineon Technologies |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 1 A |
| Voltage - Collector Emitter Breakdown (Max): | 80 V |
| Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max): | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 500mA, 10V |
| Power - Max: | 1.5 W |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4 |
