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See Product Specifications
| Part Number: | BCP55E6327 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Infineon Technologies |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1 A |
| Voltage - Collector Emitter Breakdown (Max): | 60 V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
| Power - Max: | 2 W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4-21 |
