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See Product Specifications
| Part Number: | GPI65010DF56 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | GaNPower |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 10A |
| Drive Voltage (Max Rds On, Min Rds On): | 6V |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | 1.4V @ 3.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.6 nC @ 6 V |
| Vgs (Max): | +7.5V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 90 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
