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Part Number: | EPC2110 |
Category: | Discrete Semiconductor Products |
Subcategory: | Transistors - FETs, MOSFETs - Arrays |
Manufacturer: | EPC |
Packaging: | Tape & Reel (TR) |
Product Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Source |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 120V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 60V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | - |
Package / Case: | Die |
Supplier Device Package: | Die |