FBG04N30BC

FBG04N30BC

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FBG04N30BC
Description:
GAN FET HEMT 40V30A COTS 4FSMD-B
Package:
Tray
Datasheet:
FBG04N30BC Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:FBG04N30BC
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:EPC Space, LLC
Packaging:Tray
Product Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id:2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs:11.4 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 20 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-SMD
Package / Case:4-SMD, No Lead
In Stock: 62
Stock:
62 Can Ship Immediately
  • Share:
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