GBP408

GBP408

Images are for reference only
See Product Specifications

GBP408
Description:
MEDIUM/HIGH POWER BRIDGE GBP TUB
Package:
Tube
Datasheet:
GBP408 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GBP408
Category:Discrete Semiconductor Products
Subcategory:Diodes - Bridge Rectifiers
Manufacturer:Diodes Incorporated
Packaging:Tube
Product Status:Active
Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):800 V
Current - Average Rectified (Io):4 A
Voltage - Forward (Vf) (Max) @ If:1 V @ 2 A
Current - Reverse Leakage @ Vr:5 µA @ 800 V
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:4-SIP, GBP
Supplier Device Package:GBP
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
GBU12A
GBU12A
Diotec Semiconductor
1PH BRIDGE GBU 50V 12A
GBJ2004-F
GBJ2004-F
Diodes Incorporated
BRIDGE RECT 1PHASE 400V 20A GBJ
MDMA120U1600VA
MDMA120U1600VA
IXYS
3-PH. REC. BRIDGE, B6U
MB8F
MB8F
SMC Diode Solutions
BRIDGE RECT 1P 800V 500MA MBF
VS-35MT120PB
VS-35MT120PB
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.2KV 35A 7-MTPB
SLDB104S
SLDB104S
Rectron USA
BRIDGE RECT GLASS 400V 1A SLDBS
2KBP01M/1
2KBP01M/1
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 100V 2A KBPM
PDB3ND420825
PDB3ND420825
Powerex Inc.
3-PHASE HALF-CTRL RECT ASSEMBLY
KBP02M-61E4/51
KBP02M-61E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 200V 1.5A KBPM
GBU1005
GBU1005
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 600V 10A GBU
TS10P06GHC2G
TS10P06GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 10A TS-6P
GBJ3506-G
GBJ3506-G
Comchip Technology
BRIDGE RECT
You May Also Be Interested In
P6KE91CA-T
P6KE91CA-T
Diodes Incorporated
TVS DIODE 77.8VWM 125VC DO15
FH2700018Z
FH2700018Z
Diodes Incorporated
CRYSTAL 27.0000MHZ 10PF SMD
FD2660007
FD2660007
Diodes Incorporated
XTAL OSC XO 26.6000MHZ CMOS SMD
FZT1053AQTA
FZT1053AQTA
Diodes Incorporated
PWR LOW SAT TRANSISTOR SOT223 T&
DMP2090UFDB-13
DMP2090UFDB-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
DMG1016VQ-13
DMG1016VQ-13
Diodes Incorporated
MOSFET N/P-CH 20V SOT563
DMS3017SSD-13
DMS3017SSD-13
Diodes Incorporated
MOSFET 2N-CH 30V 8A/6A 8SO
BS870Q-7-F
BS870Q-7-F
Diodes Incorporated
MOSFET N-CH 60V 250MA SOT23
ZXMN3A01FTC
ZXMN3A01FTC
Diodes Incorporated
MOSFET N-CH 30V 1.8A SOT23-3
AP7315DQ-12W5-7
AP7315DQ-12W5-7
Diodes Incorporated
IC REG LINEAR 1.2V 150MA SOT25
AP7343-105FS4-7B
AP7343-105FS4-7B
Diodes Incorporated
IC REG LINEAR 1.05V 300MA 4DFN
PT7M8218B18TAEX
PT7M8218B18TAEX
Diodes Incorporated
IC REG LINEAR 1.8V 300MA SOT23-5