DMN2016UTS-13

DMN2016UTS-13

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DMN2016UTS-13
Description:
MOSFET 2N-CH 20V 8.58A 8-TSSOP
Package:
Tape & Reel (TR)
Datasheet:
DMN2016UTS-13 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:DMN2016UTS-13
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Diodes Incorporated
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:8.58A
Rds On (Max) @ Id, Vgs:14.5mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1495pF @ 10V
Power - Max:880mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
In Stock: 0
Stock:
0 Can Ship Immediately
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