DMN10H099SFG-7

DMN10H099SFG-7

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DMN10H099SFG-7
Description:
MOSFET N-CH 100V 4.2A PWRDI3333
Package:
Tape & Reel (TR)
Datasheet:
DMN10H099SFG-7 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:DMN10H099SFG-7
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Diodes Incorporated
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1172 pF @ 50 V
FET Feature:-
Power Dissipation (Max):980mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerDI3333-8
Package / Case:8-PowerVDFN
In Stock: 0
Stock:
0 Can Ship Immediately
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