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| Part Number: | BIDW50N65T |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Bourns Inc. |
| Packaging: | Tube |
| Product Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 100 A |
| Current - Collector Pulsed (Icm): | 150 A |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 50A |
| Power - Max: | 416 W |
| Switching Energy: | 3mJ (on), 1.1mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 123 nC |
| Td (on/off) @ 25°C: | 37ns/125ns |
| Test Condition: | 400V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | 37.5 ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
