RFH10N50

RFH10N50

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RFH10N50
Description:
N-CHANNEL POWER MOSFET
Package:
Bulk
Datasheet:
RFH10N50 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RFH10N50
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Harris Corporation
Packaging:Bulk
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-218 Isolated
Package / Case:TO-218-3 Isolated Tab, TO-218AC
In Stock: 302
Stock:
302 Can Ship Immediately
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