RFD20N03

RFD20N03

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RFD20N03
Description:
N-CHANNEL POWER MOSFET
Package:
Bulk
Datasheet:
RFD20N03 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RFD20N03
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Harris Corporation
Packaging:Bulk
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
In Stock: 10550
Stock:
10550 Can Ship Immediately
  • Share:
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