IRFW630BTM

IRFW630BTM

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IRFW630BTM
Description:
N-CHANNEL POWER MOSFET
Package:
Bulk
Datasheet:
IRFW630BTM Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IRFW630BTM
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Fairchild Semiconductor
Packaging:Bulk
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 72W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock: 0
Stock:
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