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See Product Specifications
| Part Number: | IRFD213 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Harris Corporation |
| Packaging: | Tube |
| Product Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250 V |
| Current - Continuous Drain (Id) @ 25°C: | 450mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 2Ohm @ 270mA, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.2 nC @ 10 V |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 140 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | 4-HVMDIP |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
