HGTG12N60C3DR

HGTG12N60C3DR

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HGTG12N60C3DR
Description:
UFS SERIES N-CHANNEL IGBT
Package:
Bulk
Datasheet:
HGTG12N60C3DR Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:HGTG12N60C3DR
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:Harris Corporation
Packaging:Bulk
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):24 A
Current - Collector Pulsed (Icm):48 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 12A
Power - Max:104 W
Switching Energy:400µJ (on), 340µJ (off)
Input Type:Standard
Gate Charge:71 nC
Td (on/off) @ 25°C:37ns/120ns
Test Condition:480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr):37 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
In Stock: 659
Stock:
659 Can Ship Immediately
  • Share:
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