HGT1S7N60B3DS

HGT1S7N60B3DS

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HGT1S7N60B3DS
Description:
14 A, 600 V, UFS N-CHANNEL IGBT
Package:
Bulk
Datasheet:
HGT1S7N60B3DS Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:HGT1S7N60B3DS
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:Harris Corporation
Packaging:Bulk
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):14 A
Current - Collector Pulsed (Icm):56 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 7A
Power - Max:60 W
Switching Energy:160µJ (on), 120µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:26ns/130ns
Test Condition:480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr):37 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
In Stock: 0
Stock:
0 Can Ship Immediately
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