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See Product Specifications
| Part Number: | GES5816 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Harris Corporation |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 750 mA |
| Voltage - Collector Emitter Breakdown (Max): | 40 V |
| Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2mA, 2V |
| Power - Max: | 500 mW |
| Frequency - Transition: | 120MHz |
| Operating Temperature: | -55°C ~ 135°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92 |
