G5S12016BM

G5S12016BM

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G5S12016BM
Description:
SIC SCHOTTKY DIODE 1200V 16A 3-P
Package:
Cut Tape (CT)
Datasheet:
G5S12016BM Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G5S12016BM
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Arrays
Manufacturer:Global Power Technology-GPT
Packaging:Cut Tape (CT)
Product Status:Active
Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io) (per Diode):27.9A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AB
In Stock: 0
Stock:
0 Can Ship Immediately
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