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See Product Specifications
| Part Number: | G4S6508Z |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Diodes - Rectifiers - Single |
| Manufacturer: | Global Power Technology-GPT |
| Packaging: | Cut Tape (CT) |
| Product Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 650 V |
| Current - Average Rectified (Io): | 30.5A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 8 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 50 µA @ 650 V |
| Capacitance @ Vr, F: | 395pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-DFN (4.9x5.75) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
