G4S06506CT

G4S06506CT

Images are for reference only
See Product Specifications

G4S06506CT
Description:
SIC SCHOTTKY DIODE 650V 6A 2-PIN
Package:
Cut Tape (CT)
Datasheet:
G4S06506CT Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G4S06506CT
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Global Power Technology-GPT
Packaging:Cut Tape (CT)
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):13.8A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 650 V
Capacitance @ Vr, F:181pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252
Operating Temperature - Junction:-55°C ~ 175°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
SB550-E3/73
SB550-E3/73
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 5A DO201AD
CDLL5817/TR
CDLL5817/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
1N1186R
1N1186R
GeneSiC Semiconductor
DIODE GEN PURP REV 200V 35A DO5
MURH7040
MURH7040
GeneSiC Semiconductor
DIODE GEN PURP 400V 70A D-67
A177RB
A177RB
Powerex Inc.
DIODE GEN PURP 200V 100A DO205AA
25FR40
25FR40
Solid State Inc.
25 AMP SILCON RECTIFIER DO4 AK
HFA08TB60
HFA08TB60
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO220AC
BY229B-200HE3/45
BY229B-200HE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
1N4003GHR1G
1N4003GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
HS1BL M2G
HS1BL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
SRAF1020HC0G
SRAF1020HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 10A ITO220AC
CMG07(TE12L,Q,M)
CMG07(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A M-FLAT
You May Also Be Interested In
G4S06520BT
G4S06520BT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 3-PI
G4S06530BT
G4S06530BT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 3-PI
G51XT
G51XT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 1A SOD12
G4S06508DT
G4S06508DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G4S06508CT
G4S06508CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G4S06508QT
G4S06508QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN8*
G5S06506QT
G5S06506QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A DFN8*
G5S06510QT
G5S06510QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A DFN8
G3S06520P
G3S06520P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G5S12015L
G5S12015L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 3-P
G3S06530A
G3S06530A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 2-PI
G4S12010PM
G4S12010PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P