G3S12010P

G3S12010P

Images are for reference only
See Product Specifications

G3S12010P
Description:
SIC SCHOTTKY DIODE 1200V 10A 2-P
Package:
Cut Tape (CT)
Datasheet:
G3S12010P Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G3S12010P
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Global Power Technology-GPT
Packaging:Cut Tape (CT)
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):37A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 110 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Capacitance @ Vr, F:765pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247AC
Operating Temperature - Junction:-55°C ~ 175°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
ER1G-LTP
ER1G-LTP
Micro Commercial Co
DIODE GEN PURP 400V 1A DO214AA
CDBB2100-HF
CDBB2100-HF
Comchip Technology
DIODE SCHOTTKY 100V 2A DO214AA
ACGRMS4007-HF
ACGRMS4007-HF
Comchip Technology
DIODE GEN PURP 1KV 1A SOD123F
BAT54W-AU_R1_000A1
BAT54W-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
S1KH
S1KH
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
FR202GB-G
FR202GB-G
Comchip Technology
RECTIFIER FAST RECOVERY 100V 2A
FES2DEQ-7
FES2DEQ-7
Diodes Incorporated
FRED GPP RECTIFIER DO-219AA T&R
NSB8DT-E3/81
NSB8DT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
VS-10TQ035S-M3
VS-10TQ035S-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 10A D2PAK
R7220608ESOO
R7220608ESOO
Powerex Inc.
DIODE GEN PURP 600V 800A DO200AB
VS-SD263C45S50L
VS-SD263C45S50L
Vishay General Semiconductor - Diodes Division
DIODE GP 4.5KV 375A DO200AB
HT11G A0G
HT11G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A TS-1
You May Also Be Interested In
G3S06503H
G3S06503H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G5S06505DT
G5S06505DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G5S06506CT
G5S06506CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06510H
G3S06510H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510AT
G5S06510AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S12005C
G5S12005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G5S12005D
G5S12005D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G3S12010P
G3S12010P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12010M
G3S12010M
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G5S12015PM
G5S12015PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
G4S06540PT
G4S06540PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 40A 2-PI
G4S12020P
G4S12020P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P