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See Product Specifications
| Part Number: | G3S12010BM |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Diodes - Rectifiers - Arrays |
| Manufacturer: | Global Power Technology-GPT |
| Packaging: | Cut Tape (CT) |
| Product Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io) (per Diode): | 19.8A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 5 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 50 µA @ 1200 V |
| Operating Temperature - Junction: | -55°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AB |
