FQD12P10TM

FQD12P10TM

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FQD12P10TM
Description:
MOSFET P-CH 100V 9.4A TO252
Package:
Bulk
Datasheet:
FQD12P10TM Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:FQD12P10TM
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Fairchild Semiconductor
Packaging:Bulk
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
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