2SJ358-T1-AZ

2SJ358-T1-AZ

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2SJ358-T1-AZ
Mfr.:
Description:
2SJ358-T1-AZ - P-CHANNEL MOS FET
Package:
Bulk
Datasheet:
2SJ358-T1-AZ Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2SJ358-T1-AZ
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas
Packaging:Bulk
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23.9 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:MP-2
Package / Case:TO-243AA
In Stock: 6000
Stock:
6000 Can Ship Immediately
  • Share:
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