PSMN070-200P,127-NXP

PSMN070-200P,127-NXP

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PSMN070-200P,127-NXP
Mfr.:
Description:
POWER FIELD-EFFECT TRANSISTOR, 3
Package:
Bulk
Datasheet:
PSMN070-200P,127-NXP Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:PSMN070-200P,127-NXP
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:NXP USA Inc.
Packaging:Bulk
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4570 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
In Stock: 0
Stock:
0 Can Ship Immediately
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